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Indra Spearheads GIGaNTE Project to Advance Autonomous Spanish Gallium Nitride and Cutting-Edge Packaging Technologies

10 March 2026

Indra Leading GIGaNTE Project to Develop Autonomous Spanish Gallium Nitride and Advanced Packaging Technologies

In a significant leap for Spain’s technological landscape, the Indra Group has taken the helm of the GIGaNTE project, a pioneering initiative aimed at developing autonomous capabilities in gallium nitride (GaN) technologies. This project is particularly focused on enhancing advanced defense applications, especially in high-reliability radar and communications systems. The GIGaNTE project is not just a technological endeavor; it represents a strategic move to bolster Spain’s position in the global semiconductor landscape.

The GIGaNTE initiative, which stands for Gallium Nitride and Advanced Packaging Technologies Research Initiative, was launched in January 2026 with a budget exceeding €9 million. Over the next four years, this project aims to create a comprehensive value chain within Spain, from the design of advanced electronic devices to their manufacturing, integration, and final validation. This holistic approach is a first for the country and is expected to significantly enhance Spain’s technological sovereignty in a field of critical importance.

At the heart of the GIGaNTE project is a proprietary GaN manufacturing process designed to facilitate the development of high-performance electronic devices and circuits. These devices will be capable of operating in demanding frequency ranges, which is essential for modern radar and communication systems. The project will also focus on creating specialized monolithic microwave integrated circuits (MMICs) and advanced integration and packaging techniques. These innovations will enable the production of more compact, reliable, and efficient modules and antennas.

Indra Group is not alone in this ambitious venture. The consortium includes several leading companies, such as Televes Corp, SPARC Foundry, and RBZ Robot Design. Each of these partners brings unique capabilities to the table, from advanced electronics and integrated circuit design to scalable production capacity in III-V and GaN technologies. Additionally, scientific teams from prestigious institutions like the Polytechnic University of Madrid, the University of Vigo, and the University of Salamanca will contribute their expertise in GaN architectures, device characterization, and circuit integration.

Joaquín Ponz, head of Portfolio and Innovation at Indra Group, emphasized the transformative potential of gallium nitride in the next generation of defense and communications systems. He stated, “Leading a project like GIGaNTE is a clear demonstration of Indra Group’s commitment to developing critical technology capabilities from Spain.” This initiative not only aims to enhance the capabilities of radar, electronic warfare, and communications systems but also seeks to reinforce Spain’s technological sovereignty and competitiveness in a rapidly evolving global landscape.

Boosting the Chip Ecosystem

The GIGaNTE project is part of Indra Group’s broader strategy to strengthen national capabilities in critical technologies. This commitment is further exemplified by Indra’s majority stake in SPARC Foundry, which focuses on the design and production of chips based on gallium nitride and other III-V technologies. In June 2025, Indra announced its investment in SPARC, positioning it as one of the most ambitious initiatives in Europe for photonic and radio frequency semiconductors.

In a further step towards realizing its vision, Indra began construction in January 2026 of Spain’s first GaN chip factory in Vigo. This facility is expected to play a crucial role in strengthening the country’s technological sovereignty and will serve as a foundation for future advanced systems in defense and aerospace. The factory is integrated into the development of the SPARC Foundry technology platform, ensuring that the GIGaNTE project has the necessary manufacturing capabilities to succeed.

Tags: GaN RF

Visit: www.indragroup.com

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